突變結(jié)多晶硅太陽電池的初步研究.zip
突變結(jié)多晶硅太陽電池的初步研究,包括開題報告，任務(wù)書，ppt，翻譯原文和譯文摘要iabstractii1.引言11.1太陽能電池簡介11.2多晶硅太陽能電池在光伏產(chǎn)業(yè)的發(fā)展現(xiàn)狀21.3太陽能電池發(fā)展前景41.4本實驗研究意義及所用方法51.4.1試驗方法52 試驗步驟102.1 實驗步驟簡介102.2實驗儀器112.3實驗過程113 試驗結(jié)果與討論1...
該文檔為壓縮文件,包含的文件列表如下:
內(nèi)容介紹
原文檔由會員 牛奶咖啡 發(fā)布
包括開題報告，任務(wù)書，ppt，翻譯原文和譯文
摘 要 I
Abstract II
1.引言 1
1.1太陽能電池簡介 1
1.2多晶硅太陽能電池在光伏產(chǎn)業(yè)的發(fā)展現(xiàn)狀 2
1.3太陽能電池發(fā)展前景 4
1.4本實驗研究意義及所用方法 5
1.4.1試驗方法 5
2 試驗步驟 10
2.1 實驗步驟簡介 10
2.2實驗儀器 11
2.3實驗過程 11
3 試驗結(jié)果與討論 14
3.1實驗數(shù)據(jù)圖像 14
3.2電池的性能 15
3.3 結(jié)果分析與討論 17
參考文獻(xiàn) 18
致 謝 19
突變結(jié)多晶硅太陽電池的初步研究
摘 要
本實驗采用PECVD在多晶硅片上生長非晶薄膜， 以SiH4 為Si源，H2為載氣。加入摻雜氣體PH3和B2H6，沉積摻雜非晶硅薄層。通過改變PH3和B2H6 氣流量來調(diào)控薄膜中P和B元素的含量獲得不同摻雜濃度的非晶硅薄膜。通過快速熱處理的方法使薄膜晶化并激活薄膜中摻雜元素。測試分析獲得最優(yōu)N和P型硅薄膜摻雜濃度。以此為基礎(chǔ)制得P型多晶硅異質(zhì)結(jié)，經(jīng)快速熱處理后獲得所需的P型多晶硅結(jié)構(gòu)。試驗結(jié)果表明：N型非晶硅薄膜的最佳摻雜濃度為 SiH4：H2：PH3=2：100：10。P型非晶硅薄膜的最佳摻雜濃度為SiH4：H2：B2H6=2：100：5。實驗設(shè)計了2種電池結(jié)構(gòu)，第一種為ITO/n-μc-Si/p-c-Si/p-μc-Si/ITO，第二種為ITO/n-μc-Si/p-c-Si/Al。對電池進(jìn)行測試分析，獲得試其I-V特性曲線，得到其開路電壓和短路電流，計算得到太陽能電池片的轉(zhuǎn)換效率。第一種電池的轉(zhuǎn)換效率為2.6%，開路電壓為0.42V，短路電流為2.7mA。第二種電池的轉(zhuǎn)換效率為1.0%，開路電壓為0.27V，短路電流為0.5mA。第一種的電池效率高于第二種。
關(guān)鍵詞：PECVD；快速熱處理；多晶硅太陽電池；轉(zhuǎn)換效率；突變結(jié)
The preliminary research on the abrupt junction polycrystalline silicon solar cell
Abstract
In our research, firstly, P and B doped amorphous silicon films were deposited on quartz substrate by PECVD method, in which, SiH4 as Si source, H2 as carrier gas. PH3 and B2H6 were used as doping source. Then the samples were post treated by rapid thermal annealing, in order to crystallize the film and get better conducitivity. By changing the PH3 and B2H6 flow rate to manage content of P and B elements in thin film in order to get suitable resistivity for making the emitter of our new designed solar cell structure. The new solar cell is called abrupt junction polycrystalline silicon. Based on p-type polycrystalline wafer,two structures of the solar cells were designed and fabricated. The first one is ITO/n-μc-Si/p-c-Si/p-μc-Si/ITO, the second one is ITO/n-μc-Si/p-c-Si/Al.The results showed that the N type of amorphous silicon thin film optimal doping concentration for SiH4: H2: PH3 = 2:100:10. P type of amorphous silicon thin film optimal doping concentration for SiH4: H2: B2H6 = 2:100：5. Test analysis was carried out on the solar cells, try for the I - V curve,for its open circuit voltage and short circuit current,calculate the conversion efficiency of solar cell. For the first solar cell conversion efficiency is 2.6%,open circuit voltage is 0.42 V, short circuit current is 2.7 mA. For the second solar cell conversion efficiency is 1.0%, open circuit voltage is 0.27 V,short circuit current is 0.5 mA. The efficiency of the first one is higher than the second one.
Key words：PECVD；rapid thermal processing；polycrystalline silicon solar cell;conversion efficiency; abrupt junction
摘 要 I
Abstract II
1.引言 1
1.1太陽能電池簡介 1
1.2多晶硅太陽能電池在光伏產(chǎn)業(yè)的發(fā)展現(xiàn)狀 2
1.3太陽能電池發(fā)展前景 4
1.4本實驗研究意義及所用方法 5
1.4.1試驗方法 5
2 試驗步驟 10
2.1 實驗步驟簡介 10
2.2實驗儀器 11
2.3實驗過程 11
3 試驗結(jié)果與討論 14
3.1實驗數(shù)據(jù)圖像 14
3.2電池的性能 15
3.3 結(jié)果分析與討論 17
參考文獻(xiàn) 18
致 謝 19
突變結(jié)多晶硅太陽電池的初步研究
摘 要
本實驗采用PECVD在多晶硅片上生長非晶薄膜， 以SiH4 為Si源，H2為載氣。加入摻雜氣體PH3和B2H6，沉積摻雜非晶硅薄層。通過改變PH3和B2H6 氣流量來調(diào)控薄膜中P和B元素的含量獲得不同摻雜濃度的非晶硅薄膜。通過快速熱處理的方法使薄膜晶化并激活薄膜中摻雜元素。測試分析獲得最優(yōu)N和P型硅薄膜摻雜濃度。以此為基礎(chǔ)制得P型多晶硅異質(zhì)結(jié)，經(jīng)快速熱處理后獲得所需的P型多晶硅結(jié)構(gòu)。試驗結(jié)果表明：N型非晶硅薄膜的最佳摻雜濃度為 SiH4：H2：PH3=2：100：10。P型非晶硅薄膜的最佳摻雜濃度為SiH4：H2：B2H6=2：100：5。實驗設(shè)計了2種電池結(jié)構(gòu)，第一種為ITO/n-μc-Si/p-c-Si/p-μc-Si/ITO，第二種為ITO/n-μc-Si/p-c-Si/Al。對電池進(jìn)行測試分析，獲得試其I-V特性曲線，得到其開路電壓和短路電流，計算得到太陽能電池片的轉(zhuǎn)換效率。第一種電池的轉(zhuǎn)換效率為2.6%，開路電壓為0.42V，短路電流為2.7mA。第二種電池的轉(zhuǎn)換效率為1.0%，開路電壓為0.27V，短路電流為0.5mA。第一種的電池效率高于第二種。
關(guān)鍵詞：PECVD；快速熱處理；多晶硅太陽電池；轉(zhuǎn)換效率；突變結(jié)
The preliminary research on the abrupt junction polycrystalline silicon solar cell
Abstract
In our research, firstly, P and B doped amorphous silicon films were deposited on quartz substrate by PECVD method, in which, SiH4 as Si source, H2 as carrier gas. PH3 and B2H6 were used as doping source. Then the samples were post treated by rapid thermal annealing, in order to crystallize the film and get better conducitivity. By changing the PH3 and B2H6 flow rate to manage content of P and B elements in thin film in order to get suitable resistivity for making the emitter of our new designed solar cell structure. The new solar cell is called abrupt junction polycrystalline silicon. Based on p-type polycrystalline wafer,two structures of the solar cells were designed and fabricated. The first one is ITO/n-μc-Si/p-c-Si/p-μc-Si/ITO, the second one is ITO/n-μc-Si/p-c-Si/Al.The results showed that the N type of amorphous silicon thin film optimal doping concentration for SiH4: H2: PH3 = 2:100:10. P type of amorphous silicon thin film optimal doping concentration for SiH4: H2: B2H6 = 2:100：5. Test analysis was carried out on the solar cells, try for the I - V curve,for its open circuit voltage and short circuit current,calculate the conversion efficiency of solar cell. For the first solar cell conversion efficiency is 2.6%,open circuit voltage is 0.42 V, short circuit current is 2.7 mA. For the second solar cell conversion efficiency is 1.0%, open circuit voltage is 0.27 V,short circuit current is 0.5 mA. The efficiency of the first one is higher than the second one.
Key words：PECVD；rapid thermal processing；polycrystalline silicon solar cell;conversion efficiency; abrupt junction
